Study on Preparing W-doped Vanadium Dioxide Film by Inorganic Sol-gel Process
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摘要: 采用钒-钨混合溶胶及浸渍提拉法在玻璃基片上涂五氧化二钒膜,再通过氢还原法制备掺钨二氧化钒薄膜。采用XRD及XPS等测试方法对薄膜的相组成进行分析。研究了获得稳定的钨和钒混合溶胶及氢还原制备掺钨二氧化钒薄膜的条件。实验证明采用无机溶胶凝胶法制备掺钨二氧化钒薄膜可将二氧化钒薄膜的相变温度点降低到室温范围。在相变温度点附近,掺钨VO2薄膜的电阻率、近红外光透过率将发生较显著变化,可见光透过率随钨掺杂含量升高而降低。Abstract: W-doped vanadium dioxide film was prepared by dipping V-W commixed sol on surface of glass slide and reducing in hydrogen atmosphere. XRD and XPS were used to analyze the phase components of the film. Synthetic conditions of steady V-W commixed sol and W-doped VO2 film were researched.Results show that the phase transition temperature (Tc) of W-doped Vanadium dioxide film prepared by an inorganic sol-gel process can be reduced to room temperature. At the nearby of phase transition temperature, the resistance and the IR transmission of W-doped vanadium dioxide film have a notable change, and the visible light transmission decreases with the rising of environment temperature.
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Key words:
- vanadium dioxide /
- tungsten /
- film /
- sol-gel
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