Synthesizing VO2-xNy Thin Films by Microwave Plasma Enhanced Processes
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摘要: 选用V2O5为前驱物,通过在玻璃片上镀膜,利用高纯氢和高纯氮作为气源,采用微波等离子体增强法,在低温条件下合成了氮杂二氧化钒(VO2-xNy)样品。通过XRD表征了样品的成分,结果表明:合成的样品为氮杂二氧化钒,样品的结晶度较低,颗粒尺寸较小;相变温度测试结果表明:通过氮掺杂可以有效降低二氧化钒薄膜的相变温度,目前最低可以降低至42℃。Abstract: According to the character of VO2 taking phase transition at near 68℃,using the mixture gas of high pure hydrogen and high pure nitrogen as precursor,VO2-xNy thin films are synthesized at low temperature by microwave plasma enhanced procesesses using V2O5 as molecular precursors through coating film on glass slice.The components of synthesized samples are characterized by X-ray diffraction(XRD),the X-ray diffraction pattern indicates that the synthesized samples are nitrogen doped VO2-xNy,the crystallinity of synthesized sample is low and the particle size is small.The measurement of phase transition temperature indicates that the phase transition temperature of VO2-xNy thin films is dropped due to doped nitrogen,the lowest phase transition temperature is 42℃.
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